UNIVERSITY PARK, Pa. — Suman Datta, professor of electrical engineering, was part of an Intel Corp. team that was recently named the winner of the 2012 SEMI Award for North America.
Established in 1979, the SEMI Award recognizes significant technological contributions to the semiconductor industry and to demonstrate the industry's high esteem for the individuals or teams responsible for those contributions.
According to the awards committee, the team was the first to develop, integrate and introduce a successful high-k dielectric and metal electrode gate stack for complementary metal-oxide semiconductor integrated chip production in 2008.
Datta said the breakthrough allowed the creation of 45-nanometer microprocessors that deliver higher performance and greater energy efficiency, which the company claims is the biggest advancement since the introduction of polysilicon gate metal-oxide-semiconductor transistors in the late 1960s.
Before joining Penn State in 2007, Datta was a principal engineer with Intel's Advanced Transistor and Nanotechnology Group. His research focuses on high-performance advanced silicon and compound semiconductor transistor technologies.