Electrical engineering's Datta named IEEE fellow

UNIVERSITY PARK, Pa. — Suman Datta, professor of electrical engineering, has been named a fellow by the Institute of Industrial and Electronics Engineers (IEEE).

IEEE cited Datta's contributions to high-performance advanced silicon and compound semiconductor transistor technologies. According to the group, Datta's contributions in advanced silicon CMOS and compound semiconductor transistors have made a strong impact to the semiconductor industry and academic research, and have directly contributed to the advancement of high performance logic transistor technology over the last decade.

In the area of high-performance silicon logic transistors, Datta, along with his colleagues at Intel Corp., demonstrated several research breakthroughs such as strained channel CMOS transistors with high-K/metal-gate stack and non-planar multi-gate CMOS transistors called the tri-gate or 3-D transistors.

Datta has made important contributions towards the exploration of compound semiconductors as high-mobility channel replacement and their integration on silicon substrate for beyond silicon low-power logic. At Penn State, his research group has recently demonstrated efficacy of band gap engineering in compound semiconductor based tunnel transistors for steep slope device applications with markedly enhanced on-current.

Datta received his bachelor's in electrical engineering from the Indian Institute of Technology in Kanpur, India, in 1995, and his doctorate in electrical and computer engineering from the University of Cincinnati in 1999.

He has authored or co-authored more than 140 refereed journal and conference publications, and holds 142 U.S. patents related to advanced process technologies and novel transistor architectures.

Of the 400,000 members in 160 countries, IEEE elevates less than one-10th of 1 percent of its voting membership to fellow status. Datta is one of only 298 individuals to be named a fellow for 2013.

Last Updated December 18, 2012